دیتاشیت BUK7619-100B,118
مشخصات دیتاشیت
| نام دیتاشیت |
BUK7619-100B
|
| حجم فایل |
215.22
کیلوبایت
|
| نوع فایل |
pdf
|
| تعداد صفحات |
13
|
مشخصات
-
Manufacturer:
NXP USA Inc.
-
Series:
TrenchMOS™
-
Packaging:
Cut Tape (CT)
-
Part Status:
Obsolete
-
FET Type:
N-Channel
-
Technology:
MOSFET (Metal Oxide)
-
Drain to Source Voltage (Vdss):
100V
-
Current - Continuous Drain (Id) @ 25°C:
64A (Tc)
-
Drive Voltage (Max Rds On, Min Rds On):
10V
-
Rds On (Max) @ Id, Vgs:
19mOhm @ 25A, 10V
-
Vgs(th) (Max) @ Id:
4V @ 1mA
-
Gate Charge (Qg) (Max) @ Vgs:
53nC @ 10V
-
Vgs (Max):
±20V
-
Input Capacitance (Ciss) (Max) @ Vds:
3400pF @ 25V
-
FET Feature:
-
-
Power Dissipation (Max):
200W (Tc)
-
Operating Temperature:
-55°C ~ 175°C (TJ)
-
Mounting Type:
Surface Mount
-
Supplier Device Package:
D2PAK
-
Package / Case:
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
-
Base Part Number:
BUK76
-
detail:
N-Channel 100V 64A (Tc) 200W (Tc) Surface Mount D2PAK
